Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHT6N06T

Standard level FET

Fig.7. Typical transfer characteristics.

I

Fig.8. Typical transconductance, T

g

Fig.9. Normalised drain-source on-state resistance.

a = R

Fig.10. Gate threshold voltage.

V

Fig.11. Sub-threshold drain current.

I

Fig.12. Typical capacitances, C

C = f(V

012345678

0

2

4

6

8

10

ID/A

VGS/V

Tj/C =

150

25

BUK78xx-55

-100

-50

0

50

100

150

200

0

1

2

3

4

5

Tj / C

VGS(TO) / V

max.

typ.

min.

1

1.5

2

2.5

3

3.5

4

123456

789

10

gfs/S

ID/A

01

23

45

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

Sub-Threshold Conduction

typ

2%

98%

BUK98XX-55

-100

-50

0

50

100

150

200

0.5

1

1.5

2

2.5

Tmb / degC

Rds(on) normalised to 25degC

a

0.01

0.1

1

10

100

0

50

100

150

200

250

300

350

Ciss

Coss

Crss

VDS/V

September 1997

5

Rev 1.000