PHT6N06LT datasheet(5/9 Pages) PHILIPS

номер детали	PHT6N06LT

подробное описание детали	TrenchMOS transistor Logic level FET

PDF	9 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHT6N06LT

Logic level FET

Fig.7. Typical transfer characteristics.

D = f(VGS) ; conditions: VDS = 25 V; parameter Tj

Fig.8. Typical transconductance, T

j = 25 ˚C.

fs = f(ID); conditions: VDS = 25 V

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5 A; VGS = 5 V

Fig.10. Gate threshold voltage.

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.11. Sub-threshold drain current.

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

012345

ID/A

VGS/V

Tj/C = 150

BUK98xx-55

-100

-50

100

150

200

0.5

1.5

2.5

Tj / C

VGS(TO) / V

max.

typ.

min.

1234

56789

Transconductance, gfs (S)

Drain current, ID (A)

0.5

1.5

2.5

1E-05

1E-04

1E-03

1E-02

1E-01

Sub-Threshold Conduction

typ

98%

BUK98XX-55

-100

-50

100

150

200

0.5

1.5

2.5

Tmb / degC

Rds(on) normalised to 25degC

0.01

0.1

100

200

300

400

500

600

Ciss

Coss

Crss

VDS/V

January 1998

Rev 1.100

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