PHT6N03LT datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

TrenchMOS

™ transistor

PHT6N03LT

Logic level FET

ELECTRICAL CHARACTERISTICS

j= 25˚C

unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

(BR)DSS

Drain-source breakdown

GS = 0 V; ID = 0.25 mA;

voltage

j = -55˚C

(BR)GSS

Gate-source breakdown

G = 1 mA

voltage

GS(TO)

Gate threshold voltage

DS = VGS; ID = 1 mA

1.5

j = 150˚C

0.6

j = -55˚C

2.3

DS(ON)

Drain-source on-state

GS = 5 V; ID = 3.2 A

Ω

resistance

GS = 10 V; ID = 3.2 A

Ω

GS = 5 V; ID = 3.2 A; Tj = 150˚C

Ω

Forward transconductance

DS = 25 V; ID = 5.9 A

DSS

Zero gate voltage drain

DS = 30 V; VGS = 0 V;

0.05

µA

current

j = 150˚C

500

µA

GSS

Gate source leakage current V

GS = ±5 V; VDS = 0 V

0.02

µA

j = 150˚C

µA

g(tot)

Total gate charge

D = 5.9 A; VDD = 24 V; VGS = 5 V

Gate-source charge

Gate-drain (Miller) charge

d on

Turn-on delay time

DD = 15 V; ID = 5.9 A;

Turn-on rise time

GS = 5 V; RG = 5 Ω

130

d off

Turn-off delay time

Resistive load

135

Turn-off fall time

Internal drain inductance

Measured from tab to centre of die

3.5

Internal drain inductance

Measured from drain lead to centre of die

3.5

Internal source inductance

Measured from source lead to source

7.5

bond pad

iss

Input capacitance

GS = 0 V; VDS = 25 V; f = 1 MHz

1050

oss

Output capacitance

270

rss

Feedback capacitance

140

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

j = 25˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

Continuous source current

5.9

(body diode)

Pulsed source current (body

diode)

Diode forward voltage

F = 5.9 A; VGS = 0 V

0.75

1.2

Reverse recovery time

F = 5.9 A; -dIF/dt = 100 A/µs;

100

Reverse recovery charge

GS = -10 V; VR = 25 V

0.4

µC

January 1998

Rev 1.300

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