GaAs MMIC Voltage Variable Absorptive Attenuator

DC - 12 GHz

MAAA2000G

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

V3

1

RoHS

Compliant

Features

•

Single or Dual Bias Control

•

Easily Cascadable

•

Small Size

•

Attenuation Flatness DC - 12 GHz ± 0.2 dB

•

Low Control Current Consumption

•

Low Phase Shift

•

Up to 20 dB Matched Attenuation with Dual Bias

•

RoHS* Compliant

Description

M/A-COM’s MAAA2000G is a broadband GaAs

MESFET

MMIC

voltage

variable

absorptive

attenuator. Typical applications are for WLAN IEEE

802.11a+b/g, WiMAX IEEE 802.16, and MIMO.

Other applications include test equipment requiring

ultra fast switching speed.

The MAAA2000G is fabricated using a 1.0 micro

gate length GaAs MESFET process. The process

features

full

chip

passivation

for

increased

performance and reliability.

Functional Schematic

Ordering Information

Part Number

Package

MAAA2000G

DIE

1

Electrical Specifications: 0/-5 Vdc, 50

Ω, -55°C to +85°C

Parameter

Test Conditions

Units

Min.

Typ.

Max.

Insertion Loss

2

DC - 1.0 GHz

DC - 2.0 GHz

DC - 12.0 GHz

dB

dB

dB

—

—

—

—

—

—

1.2

1.4

1.5

VSWR

DC - 1.0 GHz

DC - 2.0 GHz

DC - 12.0 GHz

Ratio

Ratio

Ratio

—

—

—

—

—

—

1.5:1

1.5:1

1.8:1

Relative Attenuation

(Matched)

(Reflective)

(Matched)

DC - 2.0 GHz

DC - 2.0 GHz

2.0 - 12.0 GHz

dB

dB

dB

23

40

12

—

—

—

—

—

—

Trise, Tfall

10% to 90% RF, 90% to 10% RF

ns

—

7

—

Ton, Toff

50% Control to 90% RF, 50% Control to 10% RF

ns

—

10

—

Transients

In-band

mV

—

20

—

Input 1 dB Compression

0.5 - 4.0 GHz

dBm

—

15

—

0 to -0.2 V

µA

—

—

9

-5 V

µA

—

50

100

*Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

1. Die quantity varies.

2. Loss changes 0.00025 dB/°C (-55°C to +85°C.)