Philips Semiconductors

Product specification

PowerMOS transistors

PHP3N60E, PHB3N60E

Avalanche energy rated

AVALANCHE ENERGY LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

E

AS

Non-repetitive avalanche

Unclamped inductive load, I

-

139

mJ

energy

t

V

to fig:17

E

AR

Repetitive avalanche energy

1

I

-

5.5

mJ

avalanche = 25˚C; R

refer to fig:18

I

Repetitive and non-repetitive

-

2.8

A

avalanche current

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction

-

-

1.5

K/W

to mounting base

R

th j-a

Thermal resistance junction

SOT78 package, in free air

-

60

-

K/W

to ambient

SOT404 package, pcb mounted, minimum

-

50

-

K/W

footprint

1 pulse width and repetition rate limited by T

December 1998

2

Rev 1.200