PMD16K80 datasheet(1/2 Pages) ISC

номер детали	PMD16K80

подробное описание детали	Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon NPN Power Transistor

PMD16K80

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V(Min)

·

DC Current Gain-

: hFE= 1000(Min)@ IC=10A

APPLICATIONS

·

Designed for general purpose amplifier and

low frequencyswitching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

20

A

ICM

Collector Current-Peak

40

A

PC

Collector Power Dissipation

@TC= 25℃

200

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.875

℃

/W

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