KTC2983D datasheet(1/2 Pages) ISC

номер детали	KTC2983D

подробное описание детали	Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon NPN Power Transistor

KTC2983D

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 160V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):= 1.5V(Max) @IC= 0.5A

APPLICATIONS

· Designed for low power audio amplifier and low-current,

high-speed switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

1.5

A

IB

Base Current

1.0

A

PC

Collector Power Dissipation

TC=25℃

10

W

Collector Power Dissipation

Ta=25℃

1.0

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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