2SA1875 datasheet(1/3 Pages) ISC

номер детали	2SA1875

подробное описание детали	Silicon PNP Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon PNP Power Transistor

2SA1875

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -200V(Min)

·

DC Current Gain-

: hFE= 60(Min)@ IC= -50mA

·

Fast switching speed

·

Large current capacity

APPLICATIONS

·

Power amplifier applications

·

Driver stage amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-200

V

VCEO

Collector-Emitter Voltage

-200

V

VEBO

Emitter-Base Voltage

-3

V

IC

Collector Current-Continuous

-0.3

A

ICP

Collector Current-Continuous Pulse

-0.6

A

PC

Total Power Dissipation

@ TC=25℃

12

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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