2SC3474 datasheet(1/2 Pages) ISC

номер детали	2SC3474

подробное описание детали	Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon NPN Power Transistor

2SC3474

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 80V(Min)

·

DC Current Gain-

: hFE= 500(Min)@ IC= 0.4A

·

Fast switching speed

·

Large current capacity

APPLICATIONS

·

Power amplifier applications

·

Driver stage amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

2

A

IB

Base current

0.5

A

PC

Total Power Dissipation

@ TC=25℃

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2

Аналогичный номер детали - 2SC3474

производитель	номер детали	датащи	подробное описание детали
Toshiba Semiconductor	2SC3474	189Kb / 4P	NPN EPITAXIAL TYPE (SWITCHING, SOLENOID DRIVE APPLICATIONS)
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