1998 Mar 17

6

Philips Semiconductors

Product specification

7 N-channel 80 m

Ω FET array

enhancement mode MOS transistors

PHN708

Fig.4 Switching times test circuit with input and output waveforms.

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MAM274

90 %

10 %

10 %

90 %

Vin

Vout

td(on)

ton

toff

tf

tr

td(off)

0

0

VDD

RL

Vout

Vin

Fig.5 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.

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1

tp (s)

10

1

MDA786

Rth j−s

(K/W)

t p

T

P

t

t p

T

δ =

0.75

1

0.5

0.1

0

0.05

0.33

0.01

0.02

0.2