2SB1203 datasheet(1/3 Pages) ISC

номер детали	2SB1203

подробное описание детали	Silicon PNP Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon PNP Power Transistor

2SB1203

www.iscsemi.com

1

DESCRIPTION

·

High current and high fT

·

Low collector-to-emitter saturation voltage

·

Excellent linearity of hFE

·

Fast switching speed

APPLICATIONS

·

Relay drivers,High speed inverters,converters and other

general high-current switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-5

A

ICP

Collector Current-Pulse

-8

A

PC

Collector Power Dissipation

@ TC=25℃

20

W

Collector Power Dissipation

@ Ta=25℃

1.0

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2

Аналогичный номер детали - 2SB1203

производитель	номер детали	датащи	подробное описание детали
Sanyo Semicon Device	2SB1203	135Kb / 4P	High-Current Switching Applications
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Аналогичное описание - 2SB1203

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NEC	2SA1142	64Kb / 1P	PNP SILICON POWER TRANSISTOR
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