isc Silicon PNP Power Transistor

2SB966

www.iscsemi.com

2023-9-6

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC=-25mA; IB= 0

-120

--

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -5A; IB= -0.5A

--

--

-1.5

V

VBE(sat)

Base -Emitter Saturation Voltage

IC= -5A; IB= -0.5A

--

--

-2.0

V

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

--

--

-50

uA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

--

--

-50

uA

hFE1

DC Current Gain

IC= -1A; VCE= -5V

60

--

320

hFE2

DC Current Gain

IC= -5A; VCE= -5V

20

--

--

Cob

Collector output capacitance

VCB=-10V ,IE=0,f=1MHz

200

nF

fT

Transition frequency

VCE=-5V ,IC=-1A

65

MHz

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