2N4398 datasheet(1/3 Pages) ISC

номер детали	2N4398

подробное описание детали	Silicon PNP Power Transistor

PDF	3 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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2N4398

Silicon PNP Power Transistor

www.iscsemi.com

1

DESCRIPTION

·

Low Collector Saturation Voltage-

: VCE(sat)= -1.0V(Max.)@ IC= -15A

·

Wide Area of Safe Operation

·

Complement to Type 2N5301

APPLICATIONS

·

Designed for use in power amplifier and switching circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-40

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-30

A

ICM

Collector Current-Peak

-50

A

IB

Base Current-Continuous

-7.5

A

IBM

Base Current-Peak

-15

A

PC

Collector

Power

Dissipation@Ta=25℃

5

W

Collector

Power

Dissipation@TC=25℃

200

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

Аналогичный номер детали - 2N4398

производитель	номер детали	датащи	подробное описание детали
Mospec Semiconductor	2N4398	158Kb / 4P	POWER TRANSISTORS(200W)
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Аналогичное описание - 2N4398

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