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PD55015STR-E датащи(PDF) 7 Page - STMicroelectronics

номер детали PD55015STR-E
подробное описание детали  RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
PDF  27 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

PD55015STR-E датащи(HTML) 7 Page - STMicroelectronics

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PD55015-E, PD55015S-E
Typical performance
7/27
Figure 7.
Drain efficiency vs.
output power
Figure 8.
Input return loss vs. output power
Figure 9.
Output power vs.
bias current
Figure 10.
Drain efficiency vs. bias current
Figure 11.
Output power vs.
drain voltage
Figure 12.
Drain efficiency vs. drain voltage
0
2
4
6
8
10
12
14
16
18
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
500 MHz
520 MHz
480 MHz
Vdd = 12.5 V
Idq = 150 mA
0
2
4
6
8
10
12
14
16
18
Pout, OUTPUT POWER (W)
-40
-30
-20
-10
0
500 MHz
520 MHz
480 MHz
Vdd = 12.5 V
Idq = 150 mA
0
200
400
600
800
1000
Idq, BIAS CURRENT (mA)
12
14
16
18
20
22
520 MHz
480 MHz
500 MHz
Pin = .7 W
Vdd = 12.5 V
0
200
400
600
800
1000
Idq, BIAS CURRENT (mA)
30
40
50
60
70
500 MHz
480 MHz
520 MHz
Pin = .7 W
Vdd = 12.5 V
7
8
9
10
11
121314151617
VDS, DRAIN-SOURCE VOLTAGE (V)
0
5
10
15
20
25
520 MHz
480 MHz
500 MHz
Idq = 150mA
Pin = .7 W
7
8
9
1011
12
13
14151617
VDS, DRAIN-SOURCE VOLTAGE (V)
30
40
50
60
70
500 MHz
520 MHz
480 MHz
IDQ = 150mA
Pin = .7 W



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