PEMZ1 datasheet(3/8 Pages) PHILIPS

номер детали	PEMZ1

подробное описание детали	NPN/PNP general purpose transistors

PDF	8 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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3 / 8 page

2001 Nov 07

Philips Semiconductors

Product speciﬁcation

NPN/PNP general purpose transistors

PEMZ1

THERMAL CHARACTERISTICS

Notes

1. Transistor mounted on an FR4 printed-circuit board.

2. The only recommended soldering method is reflow soldering.

CHARACTERISTICS

Tamb =25 °C; unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

notes 1 and 2

416

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per transistor; for the PNP transistor with negative polarity

ICBO

collector-base cut-off current

VCB = 30 V; IE =0

−−

100

VCB = 30 V; IE = 0; Tj = 150 °C

−−

µA

IEBO

emitter-base cut-off current

VEB =4V; IC =0

−−

100

hFE

DC current gain

VCE =6V; IC =1mA

120

−−

VCEsat

collector-emitter saturation

voltage

IC = 50 mA; IB = 5.0 mA; note 1

−−

200

transition frequency

IC = 2 mA; VCE = 12 V; f = 100 MHz 100

−−

MHz

collector capacitance

IE =ie = 0; VCB = 12 V; f = 1 MHz

TR1 (NPN)

−−

1.5

TR2 (PNP)

−−

2.2

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