Electrical Characteristics (TAmbient=25ºC unless noted otherwise)

Symbol

Parameters

Conditions

Min.

Typ.

Max. Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0 V, ID=250μA

-30

Volt

IDSS

Zero Gate Voltage Drain Current

VDS=-30V, VGS=0V

-1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±100

nA

On Characteristics(Note 3)

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=-250μA

-1.0

-1.5

-2.5

Volt

RDS(ON)

Drain-Source On-State Resistance

VGS=-10V, ID=-12A

9.5

12

mΩ

VGS=-4.5V, ID=-8A

13

18

mΩ

Dynamic Characteristics(Note 4)

Ciss

Input Capacitance

VDD=-15V, VGS=0V ,

F=1MHz

2150

pF

Coss

Output Capacitance

308

pF

Crss

Reverse Transfer Capacitance

240

pF

Switching Characteristics(Note 4)

td(on)

Turn-on Delay Time

VDD=-15V,

VGEN=-10V,

RGEN=6Ω

9

nS

tr

Turn-on Rise Time

21

nS

td(off)

Turn-Off Delay Time

59

nS

tf

Turn-Off Fall Time

14

nS

Qg

Total Gate Charge

VDS=-15V, ID=-8A,

VGS=-4.5V

14

nC

Qgs

Gate-Source Charge

4,1

nC

Qgd

Gate-Drain Charge

6.3

nC

Drain-Source Diode Characteristics

VSD

Diode Forward Voltage

(Note 3)

VGS=0V, IS=-1.0A

-0.72

-1.4

V

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Surface mounted on FR4 Board, t≤10 sec

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

4. Guaranteed by design, not subject to production

   

FP4407D3