Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Static characteristics

Drain-source breakdown voltage

BVDSS

VGS = 0V, ID =-250µA

-30

V

Zero gate voltage drain current

IDSS

VDS =-30V,VGS = 0V

-1

µA

Gate-source leakage current

IGSS

VGS =±20V, VDS = 0V

±100

nA

VGS =-10V, ID =-9A

19

25

mΩ

Drain-source on-resistance (note 1)

RDS(on)

VGS =-4.5V, ID =-6A

27

35

mΩ

Forward tranconductance (note 1)

gFS

VDS =-5V, ID =-9A

12

S

Gate threshold voltage

VGS(th)

VDS =VGS, ID =-250µA

-1.0

-1.5

-3.0

V

Diode forward voltage (note 1)

VSD

IS=-2A,VGS=0V

-1.2

V

Dynamic characteristics

(note 2)

Input capacitance

Ciss

1400

pF

Output capacitance

Coss

163

pF

Reverse transfer capacitance

Crss

VDS =-15V,VGS =0V,f =1MHz

145

pF

Switching Characteristics

(note 2)

Turn-on delay time

td(on)

15

ns

Turn-on rise time

tr

15

ns

Turn-off delay time

td(off)

75

ns

Turn-off fall time

tf

25

ns

Notes:

1. Pulse test: Pulse width ≤300µs, duty cycle ≤2%.

2. Guaranteed by design, not subject to production change.

3. Measured with the device mounted on 1 in2 FR-4 board with 2oz. copper, in a still air environment with Ta = 25℃.

MOSFET ELECTRICAL CHARACTERISTICS

a

T =25

℃ unless otherwise specified

Total gate charge

Qg

25

nC

TGate-source charge

Qgs

7

nC

TGate-drain charge

Qgd

VGS=-4.5V,VDS=-6V,

ID=-9A

12

nC

VDD=-15V,ID=-1A,VGS=-10V,

RG=1Ω,RL=15Ω

FMP3009G

P-Channel Enhancement Mode Field Effect Transistor