Electrical Characteristics (TAmbient=25ºC unless noted otherwise)

Symbol

Parameters

Conditions

Min.

Typ.

Max. Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

30

Volt

IDSS

Zero Gate Voltage Drain Current

VDS=30V, VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

1.0

1.5

2.2

Volt

RDS(ON)

Drain-Source On-State Resistance

VGS=10V, ID=10A

12

16

mΩ

VGS=4.5V, ID=5A

20

30

mΩ

gFS

Forward Transconductance

VDS=10V, ID=3A

6

S

Dynamic Characteristics

Ciss

Input Capacitance

VDD=15V, VGS=0V ,

F=1MHz

620

pF

Coss

Output Capacitance

85

pF

Crss

Reverse Transfer Capacitance

60

pF

Switching Characteristics

td(on)

Turn-on Delay Time

VDD=15V,VGS=10V,

RGEN=3Ω

2.6

nS

tr

Turn-on Rise Time

8.5

nS

td(off)

Turn-Off Delay Time

18

nS

tf

Turn-Off Fall Time

5

nS

Qg

Total Gate Charge

VDS=15V, ID=3A,

VGS=4.5V

7.1

nC

Qgs

Gate-Source Charge

1.4

nC

Qgd

Gate-Drain Charge

1.5

nC

Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. Surface mounted on FR4 Board, t≤10 sec

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%

4. Guaranteed by design, not subject to production

   

FN1503D3

N-Channel Enhancement MOSFET