PDTC144EE datasheet(2/8 Pages) PHILIPS

номер детали	PDTC144EE

подробное описание детали	NPN resistor-equipped transistor

PDF	8 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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2 / 8 page

1998 Jul 16

Philips Semiconductors

Product speciﬁcation

NPN resistor-equipped transistor

PDTC144EE

FEATURES

• Built-in bias resistors R1 and R2

(typ. 47 k

Ω each)

• Simplification of circuit design

• Reduces number of components

and board space.

APPLICATIONS

• Especially suitable for space

reduction in interface and driver

circuits

• Inverter circuit configurations

without use of external resistors.

DESCRIPTION

NPN resistor-equipped transistor in

an SC-75 plastic package.

PNP complement: PDTA144EE.

PINNING

DESCRIPTION

base/input

emitter/ground

collector/output

Fig.1 Simplified outline (SC-75) and symbol.

handbook, halfpage

MAM346

Top view

Fig.2

Equivalent inverter

symbol.

MGA893 - 1

MARKING

TYPE

NUMBER

MARKING

CODE

PDTC144EE

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCEO

collector-emitter voltage

open base

−−

output current (DC)

−−

100

ICM

peak collector current

−−

100

Ptot

total power dissipation

Tamb ≤ 25 °C

−−

150

hFE

DC current gain

IC = 5 mA; VCE =5V

−−

input resistor

Ω

resistor ratio

0.8

1.2

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