1999 May 18

2

Philips Semiconductors

Product specification

NPN resistor-equipped transistor

PDTC123JT

FEATURES

• Built-in bias resistors R1 and R2 (typ. 2.2 kΩ and 47 kΩ

respectively)

• Simplification of circuit design

• Reduces number of components and board space.

APPLICATIONS

• Especially suitable for space reduction in interface and

driver circuits

• Inverter circuit configurations without use of external

resistors.

DESCRIPTION

NPN resistor-equipped transistor in a SOT23 plastic

package.

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

PINNING

TYPE NUMBER

PDTC123JT

∗25

PIN

DESCRIPTION

1

base/input

2

emitter/ground

3

collector/output

Fig.1 Simplified outline (SOT23) and symbol.

k, 4 columns

2

1

3

MAM097

Top view

R1

R2

3

2

1

Fig.2 Equivalent inverter symbol.

MGA893 - 1

1

3

2