2SD1691 datasheet(1/1 Pages) TGS

номер детали	2SD1691

подробное описание детали	Complementary Silicon Power Ttransistors

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производитель	TGS [Tiger Electronic Co.,Ltd]

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TO-126

Parameter

l

Value

Unit

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

7.0

V

Collector Current

IC

5.0

A

Collector Peak Current

IC(peak)

8.0

A

Total Dissipation at

Ptot

20

W

Max. Operating Junction Temperature

Tj

150

oC

Storage Temperature

Tstg

-55~150

oC

2SD1691 / 2SB1151

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cutoff Current

ICBO

VCB=50V, IE=0

—

10

uA

Emitter Cut-off Current

IEBO

VEB=7.0V, IC=0

—

10

uA

Collector-Emitter Sustaining Voltage

VCEO

IC=10mA, IB=0

60

—

V

DC Current Gain

hFE(1)

VCE=1.0V, IC=0.1A

60

—

hFE(2)

VCE=1.0V, IC=2.0A

100

—

400

hFE(3)

VCE=1.0V, IC=5.0A

50

—

Collector-Emitter Saturation Voltage

VCE(sat)

IC=2.0A,IB=0.2A

—

0.3

V

Base - Emitter Saturation Voltage

VBE(sat)

IC=2.0A,IB=0.2A

—

1.2

V

Storage Time

tstg

IC=2.0A, IB1=-IB2=0.2A

—

2.5

us

Complementary Silicon Power Ttransistors

Product specification

It is intented for use in power

amplifier and switching applications.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

hfe(2): M 100~200, L 160~320, K 200~400

TIGER ELECTRONIC CO.,LTD

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