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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BYP57-150 датащи(PDF) 2 Page - Zetex Semiconductors |
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BYP57-150 датащи(HTML) 2 Page - Zetex Semiconductors |
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2 / 5 page  BYP57 / BYP58 Absolute maximum ratings (at Tamb = 25°C unless otherwise stated) Parameter Symbol Unit Test condition BYP57-75 BYP58-75 75 BYP57-100 BYP58-100 100 BYP57-150 BYP58-150 150 BYP57-200 BYP58-200 200 BYP57-300 BYP58-300 300 BYP57-400 BYP58-400 400 BYP57-500 BYP58-500 500 BYP57-600 BYP58-600 600 BYP57-700 BYP58-700 700 Repetitive peak reverse voltage BYP57-800 BYP58-800 VRRM 800 V Tc = 140°C Forward current, arithmetic value IFAV 35 A 600 half-sine wave, ≤ 10 ms Surge forward current IFSM 500 A TJ = 175°C half-sine wave, ≤ 10 ms 1800 half-sine wave, ≤ 10 ms Maximum rated value ∫i²dt 1250 A²s TJ = 175°C half-sine wave, ≤ 10 ms Repetitive peak forward current IFRM=π*IFAV 110 A f = >15 Hz Effective forward current IFRMS 55 A Junction temperature TJmax 175 °C Storage temperature range Tstg - 50 to + 140 °C Issue 4 – September 2006 2 www.zetex.com © Zetex Semiconductors plc 2006 |
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