QPD1008

125W, 50V, DC

– 3.2 GHz, GaN RF Transistor

Data Sheet Rev. E, May 2020 | Subject to change without notice

2 of 23

www.qorvo.com

Absolute Maximum Ratings1

Parameter

Rating

Units

Breakdown Voltage, BVD

+145

V

Gate Voltage Range, VG

-7 to +2

V

Drain Current, IDMAX

20.4

A

Gate Current Range, IG

See page 4.

mA

Power Dissipation, CW, PDISS, Base Temperature = 85 °C

79

W

RF Input Power, CW, 50 Ω, T = 25 °C

+40

dBm

Mounting Temperature (30 Seconds)

320 

°C

Storage Temperature

−40 to +150

°C

Notes:

1.

. Operation of this device outside the parameter ranges given above may cause permanent damage.

Recommended Operating Conditions1

Parameter

Min

Typ

Max

Units

Operating Temperature Range

−40

+25

+85

 °C

Drain Voltage Range, VD

+12

+50

+55

V

Drain Current, ID3

–

4.0

–

A

Drain Bias Current, IDQ

–

260

–

mA

Gate Voltage, VG4

–

−2.8

–

V

Power Dissipation, CW (PD)2

–

–

71

W

Power Dissipation, Pulsed (PD)2, 3

–

–

127

W

Notes:

1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed

over all recommended operating conditions.

2. Package at 85 °C

3. Drain current at P3dB, Pulse Width = 128 uS, Duty Cycle = 10%

4. To be adjusted for desired IDQ

Electrical Characterization

Symbol

Parameter

Min

Typical

Max

Units

Gate

Leakage

VD = +10 V, VG

= −3.8 V

−23.1

–

–

mA