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ZXMN6A07F датащи(PDF) 2 Page - Zetex Semiconductors |
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ZXMN6A07F датащи(HTML) 2 Page - Zetex Semiconductors |
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2 / 8 page ![]() ZXMN6A07F Issue 6 - January 2007 2 www.zetex.com © Zetex Semiconductors plc 2007 Absolute maximum ratings NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Parameter Symbol Limit Unit Drain-source voltage VDSS 60 V Gate-source voltage VGS ± 20 V Continuous drain current @ VGS= 10V; Tamb=25°C(b) ID 1.4 A @ VGS= 10V; Tamb=70°C(b) 1.1 @ VGS= 10V; Tamb=25°C(a) 1.2 Pulsed drain current(c) IDM 6.9 A Continuous source current (body diode)(b) IS 1A Pulsed source current (body diode)(c) ISM 6.9 A Power dissipation at Tamb =25°C(a) PD 625 mW Linear derating factor 5 mW/°C Power dissipation at Tamb =25°C(b) PD 806 mW Linear derating factor 6.4 mW/°C Operating and storage temperature range Tj, Tstg -55 to +150 °C Thermal resistance Parameter Symbol Limit Unit Junction to ambient R JA 200 °C/W Junction to ambient R JA 155 °C/W |
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