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ZXMN2A01F датащи(PDF) 2 Page - Zetex Semiconductors

номер детали ZXMN2A01F
подробное описание детали  20V N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  ZETEX [Zetex Semiconductors]
домашняя страница  http://www.diodes.com/
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ZXMN2A01F датащи(HTML) 2 Page - Zetex Semiconductors

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ZXMN2A01F
SEMICO NDUC TORS
ISSUE 2 - FEBRUARY 2006
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
RθJA
200
°C/W
Junction to Ambient (b)
RθJA
155
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGS
12
V
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
ID
2.2
1.7
1.9
A
Pulsed Drain Current (c)
IDM
8A
Continuous Source Current (Body Diode) (b)
IS
1.29
A
Pulsed Source Current (Body Diode) (c)
ISM
8A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS



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