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PCF8593 датащи(PDF) 19 Page - NXP Semiconductors |
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PCF8593 датащи(HTML) 19 Page - NXP Semiconductors |
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19 / 28 page ![]() 1997 Mar 25 19 Philips Semiconductors Product specification Low power clock/calendar PCF8593 10 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). 11 HANDLING Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is desirable to take precautions appropriate to handling MOS devices Advice can be found in Data Handbook IC12 under “Handling MOS Devices”. 12 DC CHARACTERISTICS VDD = 2.5 to 6.0 V; VSS = 0 V; Tamb = −40 to +85 °C; fosc = 32 kHz; unless otherwise specified. SYMBOL PARAMETER MIN. MAX. UNIT VDD supply voltage (pin 8) −0.8 +7.0 V IDD supply current (pin 8) − 50 mA ISS supply current (pin 4) − 50 mA VI input voltage −0.8 VDD + 0.8 V II input current − 10 mA IO DC output current − 10 mA Ptot total power dissipation per package − 300 mW PO power dissipation per output − 50 mW Tamb operating ambient temperature −40 +85 °C Tstg storage temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS MIN. TYP.(1) MAX. UNIT Supply VDD supply voltage (operating mode) I2C-bus active 2.5 − 6.0 V I2C-bus inactive 1.0 − 6.0 V VDDosc supply voltage (quartz oscillator) note 2 Tamb = 0 to 70 °C 1.0 − 6.0 V Tamb = −40 to 85 °C 1.2 − 6.0 V IDD supply current (operating mode) fscl = 100 kHz; clock mode; note 3 −− 200 µA IDDO supply current (clock mode with I2C-bus inactive) fscl = 0 Hz; inputs at VDD or VSS VDD =2V − 1.0 8.0 µA VDD =5V − 4.0 15 µA SDA, SCL, INT and RESET VIL LOW level input voltage 0 − 0.3VDD V VIH HIGH level input voltage 0.7VDD − VDD V IOL LOW level output current VOL = 0.4 V 3 −− mA ILI input leakage current VI =VDD or VSS −1 − +1 µA |
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