APT50M65JFLL datasheet(2/5 Pages) ADPOW

2 / 5 page

DYNAMIC CHARACTERISTICS

APT50M65JFLL

Note:

Duty Factor D =

t1/t

Peak TJ = PDM x ZθJC + TC

SINGLE PULSE

10-5

10-4

10-3

10-2

10-1

1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.25

0.20

0.15

0.10

0.05

0.5

0.1

0.3

0.7

0.9

0.05

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting Tj = +25°C, L = 1.78mH, RG = 25Ω, Peak IL = 58A

5 dv

/dt numbers reflect the limitations of the test circuit rather than the

device itself. I

S ≤

-58A di/dt ≤ 700A/µs V

R ≤

500V

J ≤

150

°C

6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and information contained herein.

Symbol

RθJC

RθJA

MIN

TYP

MAX

0.24

UNIT

°C/W

Characteristic

Junction to Case

Junction to Ambient

THERMAL CHARACTERISTICS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

Pulsed Source Current 1 (Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -67A)

Peak Diode Recovery dv/dt 5

Reverse Recovery Time

(IS = -67A, di/dt = 100A/µs)

Reverse Recovery Charge

(IS = -67A, di/dt = 100A/µs)

Peak Recovery Current

(IS = -67A, di/dt = 100A/µs)

Symbol

ISM

VSD

dv/

trr

Qrr

IRRM

UNIT

Amps

Volts

V/ns

µC

Amps

MIN

TYP

MAX

232

1.3

Tj = 25°C

270

Tj = 125°C

540

Tj = 25°C

2.6

Tj = 125°C

9.6

Tj = 25°C

Tj = 125°C

Symbol

iss

oss

rss

d(on)

d(off)

off

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller ") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy 6

Turn-off Switching Energy

Turn-on Switching Energy 6

Turn-off Switching Energy

Test Conditions

= 0V

= 25V

f = 1 MHz

= 10V

= 250V

= 67A @ 25°C

RESISTIVE SWITCHING

= 15V

= 250V

= 67A @ 25°C

= 0.6

Ω

INDUCTIVE SWITCHING @ 25°C

= 333V, V

= 15V

= 67A, R

= 3

Ω

INDUCTIVE SWITCHING @ 125°C

= 333V V

= 15V

= 67A, R

= 3

Ω

MIN

TYP

MAX

7010

1390

141

1035

845

1556

1013

UNIT

µJ

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