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APT30M75SLL датащи(PDF) 4 Page - Advanced Power Technology

номер детали APT30M75SLL
подробное описание детали  POWER MOS 7 R MOSFET
PDF  5 Pages
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производитель  ADPOW [Advanced Power Technology]
домашняя страница  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APT30M75SLL датащи(HTML) 4 Page - Advanced Power Technology

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APT30M75BLL - SLL
1mS
100µS
TC=+25°C
TJ =+150°C
SINGLE PULSE
OPERATIONHERE
LIMITEDBYRDS(ON)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Qg, TOTAL GATE CHARGE (nC)
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1
10
100
300
0
10
20
30
40
50
0
10
20
30
40
50
60
70
80
0.3
0.5
0.7
0.9
1.1
1.3
1.5
176
100
10
1
16
12
8
4
0
VDS=150V
VDS=60V
VDS=240V
I
D
= 44A
TJ =+150°C
TJ =+25°C
Crss
Ciss
Coss
V
DD
= 200V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
I
D
(A)
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
ID (A)
R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
td(on)
td(off)
Eon
Eoff
Eon
Eoff
tr
tf
10mS
20,000
10,000
1,000
100
10
200
100
10
1
5
15
25
35
45
55
65
75
5
15
25
35
45
55
65
75
5
15
25
35
45
55
65
75
0
5
10
152025
30
35 404550
V
DD
= 200V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
V
DD
= 200V
R
G
= 5
Ω
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
V
DD
= 200V
I
D
= 44A
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
50
40
30
20
10
0
800
600
400
200
0
70
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0



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