BFQ81 datasheet(1/2 Pages) ISC

номер детали	BFQ81

подробное описание детали	Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon NPN Power Transistor

BFQ81

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 16V(Min)

· Intendedfor RF wideband amplifier applications

such as satellite TV systemsand RF portable communication

equipment with signal frequenciesup to 2 GHz.

APPLICATIONS

·

Low noise figure

·

Gold metallization ensures excellent reliability

·

High power gain

·

High transition frequency

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

25

V

VCEO

Collector-Emitter Voltage

16

V

VEBO

Emitter-Base Voltage

2.5

V

IC

Collector Current-Continuous

120

mA

PC

Collector Power Dissipation

@TC=25℃

250

mW

TJ

Junction Temperature

-55~150

℃

Tstg

Storage Temperature

-55~150

℃

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