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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LQFP100 датащи(PDF) 50 Page - STMicroelectronics |
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LQFP100 датащи(HTML) 50 Page - STMicroelectronics |
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50 / 429 page  50/429 ST92F124/F150/F250 - SINGLE VOLTAGE FLASH & E3 TM (EMULATED EEPROM) 3 SINGLE VOLTAGE FLASH & E3 TM (EMULATED EEPROM) 3.1 INTRODUCTION The Flash circuitry contains one array divided in two main parts that can each be read independ- ently. The first part contains the main Flash array for code storage, a reserved array (TestFlash) for system routines and a 128-byte area available as one time programmable memory (OTP). The sec- ond part contains the two dedicated Flash sectors used for EEPROM Hardware Emulation. The write operations of the two parts are managed by an embedded Program/Erase Controller. Through a dedicated RAM buffer the Flash and the E3 TM can be written in blocks of 16 bytes. Figure 30. Flash Memory Structure (Example for 64K Flash device) 230000h 004000h 002000h 000000h Sector F1 8 Kbytes Sector F0 8 Kbytes TestFlash 8 Kbytes Program / Erase Controller RAM buffer 16 bytes Register Interface Address Data 231F80h User OTP and Protection registers Sector F2 48 Kbytes sense amplifiers 22CFFFh 228000h Hardware emulated EEPROM sectors 8 Kbytes (Reserved) Emulated EEPROM 1 Kbyte sense amplifiers 220000h 2203FFh 010000h 9 |
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