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BUL98 датащи(PDF) 4 Page - STMicroelectronics

номер детали BUL98
подробное описание детали  High voltage fast-switching NPN power transistor
PDF  10 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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BUL98 датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
BUL98
4/10
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (1) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE =0)
VCE = 800V
VCE = 800V Tj = 125°C
100
500
µA
µA
ICEO
Collector-emitter current
(IB =0)
VCE = 450V
100
µA
VCEO(sus)(1)
Collector-emitter
sustaining voltage (IB = 0)
IC =10mA
L = 25mH
450
V
VEBO
Emitter-base voltage
(IC = 0)
IE =10mA
9V
VCE(sat) (1) Collector-emitter
saturation voltage
IC =5A
_ _ IB =1A
IC =9A
_ _ IB =1.8A
IC =12A __ _ IB =2.4A
0.15
0.3
0.5
0.5
0.8
1.5
V
V
V
VBE(sat) (1)
Base-emitter saturation
voltage
IC =5A
_ _ IB =1A
IC =9A
_ _ IB =1.8A
IC =12A __ _ IB =2.4A
0.95
1
1.1
1.2
1.3
1.4
V
V
V
hFE (1)
DC current gain
IC =10mA
VCE =5V
IC =5A
VCE =5V
10
15
35
ts
tf
Inductive load
Storage time
Fall time
VCL =350V
IC =9A
VBE(off) =-5V IB1 =1.8A
L =200
µH
RBB(off) =0Ω
(see figure 8)
1.1
55
1.8
100
µs
ns
ts
tf
Inductive load
Storage time
Fall time
VCL =350V
IC =9A
VBE(off) =-5V IB1 =1.8A
L =200
µH
RBB(off) =0Ω
Tj = 100°C (see figure 8)
1.5
80
µs
ns



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