STTH112_07 datasheet(2/7 Pages) STMICROELECTRONICS

номер детали	STTH112

подробное описание детали	High voltage ultrafast rectifier

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STTH112

2/7

Electrical characteristics

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth (j-l)

Junction to lead

L = 10 mm

DO-41

°C/W

SMA

SMB

Rth (j-a)

Junction to ambient

L = 10 mm

DO-41

110

Table 3.

Static electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

Reverse leakage current

VR = 1200V

Tj = 25° C

µA

Tj = 125° C

Forward voltage drop

IF = 1 A

Tj = 25° C

1.9

Tj = 125° C

1.17

1.65

Tj = 150° C

1.10

1.55

Table 4.

Dynamic electrical characteristics

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 0.5 A

Irr = 0.25 A IR = 1A

Tj = 25° C

tfr

Forward recovery time

IF = 1 A

dIF/dt = 50 A/µs

VFR = 1.1 x VFmax

Tj = 25° C

500

VFP

Forward recovery voltage

Figure 1.

Conduction losses versus average

current

Figure 2.

Forward voltage drop versus

forward current.

P(W)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

δ = 1

δ = 0.05

δ = 0.5

δ = 0.2

δ = 0.1

(A)

F(AV)

δ=tp/T

(A)

0.1

1.0

10.0

100.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

T =125°C

(maximum values)

T =125°C

(typical values)

T =25°C

(maximum values)

(V)

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