ISC320N12LM6 datasheet(1/11 Pages) INFINEON

номер детали	ISC320N12LM6

подробное описание детали	MOSFET OptiMOSTM 6 Power-Transistor, 120 V

PDF	11 Pages

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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1

ISC320N12LM6

Rev.2.0,2023-10-11

Final Data Sheet

1

2

3

4

5

6

7

8

4

3

2

1

5

6

7

8

SuperSO8

Drain

Pin 5-8

Gate

Pin 4

Source

Pin 1-3

*1

*1: Internal body diode

MOSFET

OptiMOSTM6Power-Transistor,120V

Features

•N-channel,logiclevel

•Verylowon-resistanceRDS(on)

•ExcellentgatechargexRDS(on)product(FOM)

•Verylowreverserecoverycharge(Qrr)

•Highavalancheenergyrating

•175°Coperatingtemperature

•Optimizedforhighfrequencyswitchingandsynchronousrectification

•Pb-freeleadplating;RoHScompliant

•Halogen-freeaccordingtoIEC61249-2-21

•MSL1classifiedaccordingtoJ-STD-020

Productvalidation

FullyqualifiedaccordingtoJEDECforIndustrialApplications

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS

120

V

RDS(on),max

32

m

Ω

ID

24

A

Qoss

13

nC

QG(0V...4.5V)

4.1

nC

Qrr(1000A/µs)

20.3

nC

Type/OrderingCode

Package

Marking

RelatedLinks

ISC320N12LM6

PG-TDSON-8

320N12L6

-

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Аналогичный номер детали - ISC320N12LM6

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