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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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20ETF06FP датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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20ETF06FP датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Fast Recovery Rectifier Diode 20ETF06FP www.iscsemi.com 1 FEATURES · Low forward voltage drop · High frequency operation APPLICATIONS • Output rectification and freewheeling in inverters, choppers and converters • Input rectifications where severe restrictions on conducted EMI should be met ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 600 V IF(AV) Average Rectified Forward Current 20 A IFSM Non-repetitive Peak Surge Current 10 ms sine pulse, rated VRRM applied 250 A Non-repetitive Peak Surge Current 10 ms sine pulse, no voltage reapplied 300 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.5 ℃ /W 1 3 |
Аналогичный номер детали - 20ETF06FP |
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Аналогичное описание - 20ETF06FP |
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