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B2M040120Z датащи(PDF) 3 Page - BASIC SEMICONDUCTOR

номер детали B2M040120Z
подробное описание детали  SiC MOSFET
PDF  14 Pages
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производитель  BASICSEMI [BASIC SEMICONDUCTOR]
домашняя страница  https://www.basicsemi.com/
Logo BASICSEMI - BASIC SEMICONDUCTOR

B2M040120Z датащи(HTML) 3 Page - BASIC SEMICONDUCTOR

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SiC MOSFET
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Thermal Characteritics
Symbol
Parameter
Value
Unit
Min.
Typ.
Max.
0.43
0.60
K/W
Thermal Resistance from Junction to Case
R
th(jc)
AC Characteristics
Gate Charge Characteristics
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
2100
115
6
1.6
pF
pF
pF
47
μJ
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Gate Resistance
C
iss
C
oss
C
rss
R
G(int)
V
GS=0V, VDS=800V
f =100kHz, V
AC=25mV
f =1MHz, V
AC=25mV
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
30
42
90
nC
nC
nC
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Q
GS
Q
GD
Q
G
V
DS=800V
I
D =40A
V
GS=-4/+18V
C
oss Stored Energy
E
oss
147
pF
Effective Output Capacitance,
Energy Related
C
O(ER)
V
GS=0V, 0V < VDS < 800V
215
pF
Effective Output Capacitance,
Time Related
C
O(TR)
V
GS=0V, 0V < VDS < 800V
B2M040120Z
Rev. 0.4



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