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C2M0045170D датащи(PDF) 3 Page - Inchange Semiconductor Company Limited

номер детали C2M0045170D
подробное описание детали  SiC N-Channel MOSFET
PDF  4 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

C2M0045170D датащи(HTML) 3 Page - Inchange Semiconductor Company Limited

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ISCF8030
eq C2M0045170D
SiC N-Channel MOSFET
www.iscsemi.com
3
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
EON
Turn-On Switching Energy
(SiC Diode FWD)
VDS = 1200 V, VGS = -5/20 V
ID = 50A, RG = 2.5Ω, L= 99μH
TJ = 150℃
using SiC Diode as FWD
--
2.5
--
mJ
EOFF
Turn Off Switching Energy
(SiC Diode FWD)
--
1.4
--
EON
Turn-On Switching Energy
(SiC Diode FWD)
VDS = 1200 V, VGS = -5/20 V
ID = 50A, RG = 2.5Ω, L= 99μH
TJ = 150℃
using MOSFET Diode as FWD
--
4.9
--
EOFF
Turn Off Switching Energy
(SiC Diode FWD)
--
1.1
--
SOURCE-DRAIN BODY DIODE CHARACTERISTICS
Drain - Source Body Diode Characteristics
VSD
Diode Forward Voltage
ISD=25A, VGS= -5V
--
3.8
--
V
ISD=25A, VGS= -5V,TJ = 150℃
--
3.4
--
IS
Continuous Diode Forward Current
VGS = - 5 V, TC= 25 °C
--
--
76
A
trr
Reverse Recovery Time
VGS = -5 V, ISD = 50 A
VR =1200V
dif/dt=1000 A/µs
TJ = 150℃
--
53
--
ns
Qrr
Reverse Recovery Charge
--
461
--
uC
Irrm
Peak Reverse Recovery Current
--
14
--
A
trr
Reverse Recovery Time
VGS = -5 V, ISD = 50 A
VR =1200V
dif/dt=3040 A/µs
TJ = 150℃
--
40
--
ns
Qrr
Reverse Recovery Charge
--
481
--
uC
Irrm
Peak Reverse Recovery Current
--
22
--
A



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