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NE5205AD датащи(PDF) 4 Page - NXP Semiconductors

номер детали NE5205AD
подробное описание детали  Wide-band high-frequency amplifier
PDF  14 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

NE5205AD датащи(HTML) 4 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
NE/SA/SE5205A
Wide-band high-frequency amplifier
1992 Feb 24
4
DC ELECTRICAL CHARACTERISTICS
VCC=6V, ZS=ZL=ZO=50Ω and TA=25°C in all packages, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
SE5205A
NE/SA5205A
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
Min
Typ
Max
UNIT
VCC
Operating supply voltage range
Over temperature
5
5
6.5
6.5
5
5
8
8
V
V
ICC
Supply current
Over temperature
20
19
25
25
32
33
20
19
25
25
32
33
mA
mA
S21
Insertion gain
f=100MHz
Over temperature
17
16.5
19
21
21.5
17
16.5
19
21
21.5
dB
S11
Input return loss
f=100MHz D, N
25
25
dB
S11
Input return loss
DC - fMAX D, N
12
12
dB
S22
Output return loss
f=100MHz D, N
27
27
dB
S22
Output return loss
DC - fMAX
12
12
dB
S12
Isolation
f=100MHz
-25
-25
dB
S12
Isolation
DC - fMAX
-18
-18
dB
tR
Rise time
500
500
ps
tP
Propagation delay
500
500
ps
BW
Bandwidth
±0.5dB D, N
300
450
MHz
fMAX
Bandwidth
-3dB D, N
550
MHz
Noise figure (75
Ω)
f=100MHz
4.8
4.8
dB
Noise figure (50
Ω)
f=100MHz
6.0
6.0
dB
Saturated output power
f=100MHz
+7.0
+7.0
dBm
1dB gain compression
f=100MHz
+4.0
+4.0
dBm
Third-order intermodulation
intercept (output)
f=100MHz
+17
+17
dBm
Second-order intermodulation
intercept (output)
f=100MHz
+24
+24
dBm



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