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MMBTA42 датащи(PDF) 3 Page - NXP Semiconductors

номер детали MMBTA42
подробное описание детали  NPN high-voltage transistor
PDF  8 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

MMBTA42 датащи(HTML) 3 Page - NXP Semiconductors

  MMBTA42 Datasheet HTML 1Page - NXP Semiconductors MMBTA42 Datasheet HTML 2Page - NXP Semiconductors MMBTA42 Datasheet HTML 3Page - NXP Semiconductors MMBTA42 Datasheet HTML 4Page - NXP Semiconductors MMBTA42 Datasheet HTML 5Page - NXP Semiconductors MMBTA42 Datasheet HTML 6Page - NXP Semiconductors MMBTA42 Datasheet HTML 7Page - NXP Semiconductors MMBTA42 Datasheet HTML 8Page - NXP Semiconductors  
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2000 Apr 11
3
Philips Semiconductors
Product specification
NPN high-voltage transistor
MMBTA42
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 200 V
100
nA
IEBO
emitter cut-off current
IC = 0; VEB =6V
100
nA
hFE
DC current gain
VCE =10V
IC = 1 mA
25
IC =10mA
40
IC =30mA
40
VCEsat
collector-emitter saturation voltage
IC = 20 mA; IB =2mA
500
mV
VBEsat
base-emitter saturation voltage
IC = 20 mA; IB =2mA
900
mV
Cre
feedback capacitance
IC =ic = 0; VCB =20V;
f = 1 MHz
3pF
fT
transition frequency
IC = 10 mA; VCE =20V;
f = 100 MHz
50
MHz



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