MMBT2222 datasheet(3/8 Pages) PHILIPS

3 / 8 page

2000 Apr 11

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

MMBT2222A

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−

IE = 0; VCB =60V; Tj = 125 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

hFE

DC current gain

IC = 0.1 mA; VCE =10V

−

IC = 1 mA; VCE =10V

−

IC = 10 mA; VCE =10V

−

IC = 10 mA; VCE =10V;

Tamb = −55 °C

−

IC = 150 mA; VCE = 10 V

100

300

IC = 150 mA; VCE =1V

−

IC = 500 mA; VCE =10V

−

VCEsat

collector-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1 −

300

IC = 500 mA; IB = 50 mA; note 1 −

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB = 15 mA; note 1 0.6

1.2

IC = 500 mA; IB = 50 mA; note 1 −

collector capacitance

IE =ie = 0; VCB =10V;

f = 1 MHz

−

8pF

emitter capacitance

IC =ic = 0; VEB = 500 mV;

f = 1 MHz

−

transition frequency

IC = 20 mA; VCE =20V;

f = 100 MHz

300

−

MHz

noise ﬁgure

IC = 100 µA; VCE =5V;

RS =1kΩ; f = 1 kHz

−

4dB

Switching times (between 10% and 90% levels); (see Fig.2)

ton

turn-on time

ICon = 150 mA; IBon =15mA;

IBoff = −15 mA

−

delay time

−

rise time

−

toff

turn-off time

−

250

storage time

−

200

fall time

−

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