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AM29LV033MU датащи(PDF) 52 Page - SPANSION |
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AM29LV033MU датащи(HTML) 52 Page - SPANSION |
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52 / 61 page ![]() 50 Am29LV033MU September 12, 2006 DA TA SH EET AC CHARACTERISTICS Alternate CE# Controlled Erase and Program Operations Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. Write buffer program is typical per word. 3. For 1–32 bytes programmed. 4. Effective write buffer specification is based upon a 32-byte write buffer operation. 5. Byte programming specification is based upon a single byte programming operation not utilizing the write buffer. 6. When using the program suspend/resume feature, if the suspend command is issued within t POLL, tPOLL must be fully re-applied upon resuming the programming operation. If the suspend command is issued after t POLL, tPOLL is not required again prior to reading the status bits upon resuming. Parameter Speed Options JEDEC Std. Description 90R 101, 101R 112, 112R 120, 120R Unit t AVAV t WC Write Cycle Time (Note 1) Min 90 100 110 120 ns t AVWL t AS Address Setup Time Min 0 ns t ELAX t AH Address Hold Time Min 45 ns t DVEH t DS Data Setup Time Min 45 ns t EHDX t DH Data Hold Time Min 0 ns t GHEL t GHEL Read Recovery Time Before Write (OE# High to WE# Low) Min 0 ns t WLEL t WS WE# Setup Time Min 0 ns t EHWH t WH WE# Hold Time Min 0 ns t ELEH t CP CE# Pulse Width Min 45 ns t EHEL t CPH CE# Pulse Width High Min 30 ns t WHWH1 t WHWH1 Write Buffer Program Operation (Notes 2, 3) Typ 240 µs Effective Write Buffer Program Operation, Per Byte (Notes 2, 4) Typ 7.5 µs Accelerated Effective Write Buffer Program Operation, Per Byte (Notes 2, 4) Typ 6.25 µs Single Byte Program (Notes 2, 5) Typ 60 µs Accelerated Single Byte Programming Operation (Note 2, 5) Typ 54 µs t WHWH2 t WHWH2 Sector Erase Operation (Note 2) Typ 0.4 sec t RH RESET# High Time Before Write (Note 1) Min 50 ns t POLL Program Valid before Status Polling (Note 6) Max 4 µs |
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