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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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AM29LV640MT100RPCF датащи(PDF) 28 Page - Advanced Micro Devices |
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AM29LV640MT100RPCF датащи(HTML) 28 Page - Advanced Micro Devices |
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28 / 66 page  26 Am29LV640MT/B 26190C8 February 1, 2007 D A TA SH EE T Table 10. Device Geometry Definition Addresses (x16) Addresses (x8) Data Description 27h 4Eh 0017h Device Size = 2N byte 28h 29h 50h 52h 0002h 0000h Flash Device Interface description (refer to CFI publication 100) 2Ah 2Bh 54h 56h 0005h 0000h Max. number of byte in multi-byte write = 2N (00h = not supported) 2Ch 58h 0002h Number of Erase Block Regions within device (01h = uniform device, 02h = boot device) 2Dh 2Eh 2Fh 30h 5Ah 5Ch 5Eh 60h 007Fh 0000h 0020h 0000h Erase Block Region 1 Information (refer to the CFI specification or CFI publication 100) 31h 32h 33h 34h 62h 64h 66h 68h 007Eh 0000h 0000h 0001h Erase Block Region 2 Information (refer to CFI publication 100) 35h 36h 37h 38h 6Ah 6Ch 6Eh 70h 0000h 0000h 0000h 0000h Erase Block Region 3 Information (refer to CFI publication 100) 39h 3Ah 3Bh 3Ch 72h 74h 76h 78h 0000h 0000h 0000h 0000h Erase Block Region 4 Information (refer to CFI publication 100) |
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