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DMN5L06DMK датащи(PDF) 2 Page - Diodes Incorporated

номер детали DMN5L06DMK
подробное описание детали  DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
PDF  5 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN5L06DMK датащи(HTML) 2 Page - Diodes Incorporated

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Notes:
5. Short term duration test pulse used to minimize self-heating effect.
DS30927 Rev. 2 - 2
2 of 5
DMN5L06DMK
www.diodes.com
Electrical Characteristics
@ TA = 25
°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BVDSS
50
¾¾
V
VGS = 0V, ID = 10
mA
Zero Gate Voltage Drain Current
@ TC = 25°C
IDSS
¾¾
60
nA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
¾¾
1
500
50
µA
nA
nA
VGS = ±12V, VDS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(th)
0.49
¾
1.2
V
VDS =VGS, ID = 250
mA
Static Drain-Source On-Resistance
RDS (ON)
¾
¾
¾
¾
¾
¾
3.0
2.5
2.0
W
VGS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
On-State Drain Current
ID(ON)
0.5
1.4
¾
A
VGS = 10V, VDS = 7.5V
Forward Transconductance
|Yfs|
200
¾¾
mS
VDS =10V, ID = 0.2A
Source-Drain Diode Forward Voltage
VSD
0.5
¾
1.4
V
VGS = 0V, IS = 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
¾¾
50
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
¾¾
25
pF
Reverse Transfer Capacitance
Crss
¾¾
5.0
pF
0
0.3
0.6
0.9
01
2
3
4
5
V
DS, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristics
1.2
1.5
6V
10V
5V
3V
4V
V= 10V
8V
6V
5V
4V
3V
GS
8V
V
, GATE-SOURCE VOLTAGE (V)
Fig.2 Typical Transfer Characteristics
GS
0.01
3
0.1
1
0
1
2
V
= 10V
Pulsed
DS
T= -55 C
A
°
T= -25 C
A
°
T= 125 C
A
°
T= 85 C
A
°
T= 25 C
A
°
T= 150 C
A
°



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