DS30896 Rev. 2 - 2

2 of 4

2N7002K

www.diodes.com

Electrical Characteristics

°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

60

¾¾

V

mA

Zero Gate Voltage Drain Current

¾¾

1.0

mA

Gate-Source Leakage

¾¾

±10

mA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

1.0

1.6

2.5

V

Static Drain-Source On-Resistance

¾

¾

¾

2.0

3.0

W

Forward Transfer Admittance

80

¾¾

ms

DYNAMIC CHARACTERISTICS

Input Capacitance

¾¾

50

pF

f = 1.0MHz

Output Capacitance

¾¾

25

pF

Reverse Transfer Capacitance

¾¾

5.0

pF

0

0.2

0.4

0.6

0.8

1.0

01

2

3

4

5

V

DRAIN-SOURCE VOLTAGE (V)

Fig.1 Typical Output Characteristics

1.2

1.4

3V

4V

6V

8V

10V

V

= 10V

8V

6V

5V

4V

3V

GS

5V

V

, GATE-SOURCE VOLTAGE (V)

Fig.2 Typical Transfer Characteristics

GS

0.01

0.10

1.00

1

1.5

2

2.5

33.5

4

4.5

5

T = 125 C

A

°

T= 25 C

A

°

T= -25 C

A

°

T= 75 C

A

°

V

= 10V

Pulsed

DS

T , CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage

vs. Channel Temperature

ch

0

0.5

1

1.5

2

-50

-25

0

25

50

75

100

125

150

V= 10V

I= 1mA

Pulsed

DS

D

0.1

I DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance

Vs. Drain Current

1

10

0.001

0.01

0.1

1

T= 150 C

A

°

T = 125 C

A

°

T= 85 C

A

°

T= -55 C

A

°

T= 25 C

A

°

T= 0 C

A

°

T= -25 C

A

°

V

= 10V

Pulsed

GS

Notes:

5. Short duration test pulse used to minimize self-heating effect.