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DL161 датащи(PDF) 56 Page - Advanced Micro Devices |
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DL161 датащи(HTML) 56 Page - Advanced Micro Devices |
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56 / 63 page ![]() Am41DL16x4D 55 P R E L IMINARY AC CHARACTERISTICS Figure 29. SRAM Read Cycle Notes: 1. WE# = VIH, if CIOs is low, ignore UB#s/LB#s timing. 1. t HZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 2. At any given temperature and voltage condition, tHZ (Max.) is less than tLZ (Min.) both for a given device and from device to device interconnection. Data Valid High-Z tRC CS#1 Address UB#, LB# OE# Data Out tOH tAA tCO1 tBA tOE tOLZ tBLZ tLZ tOHZ tBHZ tHZ CS2 tCO2 |
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