1999 Apr 22

3

Philips Semiconductors

Product specification

NPN microwave power transistor

LLE18300X

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Up to 0.2 mm from ceramic.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

45

V

collector-emitter voltage

30

V

collector-emitter voltage

open base

−

15

V

emitter-base voltage

open collector

−

3V

collector current (DC)

−

6A

input power

8W

total power dissipation

−

50

W

storage temperature

−65

+150

°C

junction temperature

−

200

°C

soldering temperature

t

≤ 10 s; 1

−

235

°C

(I) Region of permissible DC operation.

Fig.2 DC SOAR.

MBD734

10

1

10

1

V

(V)

CE

I C

(A)

ΙΙΙ

Fig.3 Power derating curve.

0

50

100

200

20

0

MEA577

150

T

( C)

o

mb

Ptot

(W)

40

60