поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

AM29DS323D датащи(PDF) 52 Page - Advanced Micro Devices

номер детали AM29DS323D
подробное описание детали  32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
PDF  56 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29DS323D датащи(HTML) 52 Page - Advanced Micro Devices

Back Button AM29DS323D Datasheet HTML 48Page - Advanced Micro Devices AM29DS323D Datasheet HTML 49Page - Advanced Micro Devices AM29DS323D Datasheet HTML 50Page - Advanced Micro Devices AM29DS323D Datasheet HTML 51Page - Advanced Micro Devices AM29DS323D Datasheet HTML 52Page - Advanced Micro Devices AM29DS323D Datasheet HTML 53Page - Advanced Micro Devices AM29DS323D Datasheet HTML 54Page - Advanced Micro Devices AM29DS323D Datasheet HTML 55Page - Advanced Micro Devices AM29DS323D Datasheet HTML 56Page - Advanced Micro Devices  
Zoom Inzoom in Zoom Outzoom out
 52 / 56 page
background image
50
Am29DS323D
23480A5 October 10, 2006
D A TA
SH EET
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 2.0 V V
CC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°C, V
CC = 2.2 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
14 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except VCC. Test conditions: VCC = 2.0 V, one pin at a time.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
2
15
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
130
sec
Byte Program Time
9
270
µs
Excludes system level
overhead (Note 5)
Word Program Time
13
390
µs
Accelerated Byte/Word Program Time
7
210
µs
Chip Program Time
(Note 3)
Byte Mode
54
160
sec
Word Mode
27
81
Description
Min
Max
Input voltage with respect to V
SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
11 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
VCC Current
–100 mA
+100 mA
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150
°C10
Years
125
°C20
Years



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com