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AM29SL160C датащи(PDF) 40 Page - Advanced Micro Devices

номер детали AM29SL160C
подробное описание детали  16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
PDF  52 Pages
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производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29SL160C датащи(HTML) 40 Page - Advanced Micro Devices

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38
Am29SL160C
21635C5 January 23, 2007
D A TA
SH EE T
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See “Erase And Programming Performance” on page 46 for more information.
Parameter
Speed Options
JEDEC
Std.
Description
-100
-120
-150
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
100
120
150
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
50
60
70
ns
tDVWH
tDS
Data Setup Time
Min
50
60
70
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
50
60
70
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation (Notes 1, 2)
Byte
Typ
10
µs
Word
Typ
12
Accelerated Program Operation, Byte or Word
(Note 2)
Typ
8
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Notes 1, 2)
Typ
2
sec
t
VCS
V
CC Setup Time
Min
50
µs
t
RB
Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Max
200
ns



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