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AM29F400B датащи(PDF) 42 Page - Advanced Micro Devices

номер детали AM29F400B
подробное описание детали  4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
PDF  43 Pages
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производитель  AMD [Advanced Micro Devices]
домашняя страница  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29F400B датащи(HTML) 42 Page - Advanced Micro Devices

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Am29F400B
21505E5 November 1, 2006
D A TA
SH EE T
General Description
Third paragraph: Added 45 ns to access times.
Product Selector Guide
Added the -45 speed option for VCC = 5.0 V ± 5% and
the -55 speed option for VCC = 5.0 V ± 10%.
Ordering Information
Added “Special Designation” to “Optional Processing”
heading; added “0” for 55 ns 10% VCC, deleted burn-in.
Burn-in is available by contacting an AMD representative.
Added -55 ± 10% and -45 speed options to the list of
valid combinations. Added extended temperature
ratings to -55 ±5% valid combinations.
Table 1, Device Bus Operations
Changed the BYTE#=VIL input for DQ8–DQ15 during
temporary sector unprotect to “don’t care” (X).
Figure 6. Maximum Negative Undershoot
Waveform
Corrected figure title.
Table 7, Test Specifications
Test load capacitance: Removed 55 ns speed option
from and added -45 speed option to the 30 pF.
DC Characteristics
Removed VCC = VCC max test condition for ICC1 – ICC3.
VCC max is only valid for max specs.
AC Characteristics
Added the -45 speed option.
Revision C+4 (August 1998)
Ordering Information
Added extended temperature combinations to the -55,
±10% speed option.
Deleted the -60 speed option.
Revision D (January 1999)
Distinctive Characteristics
Added:
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
DC Characteristics—TTL/NMOS Compatible
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC
specifications are tested with VCC = VCCmax”.
DC Characteristics—CMOS Compatible
ICC1, ICC2, ICC3: Added Note 2 “Maximum ICC
specifications are tested with VCC = VCCmax”.
Erase and Programming Performance
Deleted “(4.75 V for -45 and -55xx0)” from Note 2.
Revision D+1 (July 2, 1999)
Global
Added references to availability of device in Known
Good Die (KGD) form.
Revision E (November 15, 1999)
AC Characteristics—Figure 13. Program
Operations Timing and Figure 14. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E+1 (November 30, 2000)
Added table of contents. Reinserted revision summa-
ries for revisions A and B.
Revision E+2 (June 4, 2004)
Ordering Information
Added Pb-Free OPNs
Revision E+3 (December 22, 2005)
Global
Deleted 150 ns speed option and reverse TSOP pack-
age from document.
Revision E4 (May 18, 2006)
Added “Not recommended for new designs” note.
AC Characteristics
Changed tBUSY specification to maximium value.
Revision E5 (November 1, 2006)
Deleted “Not recommended for new designs” note and
Retired Product designation.



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