DS30373 Rev. 5 - 2

2 of 3

BC857BS

www.diodes.com

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

DC Current Gain (Note 3)

220

—

475

—

Thermal Resistance, Junction to Ambient Air (Note 1)

—

—

625

°C/W

Note 1

Collector-Emitter Saturation Voltage (Note 3)

—

—

—

-100

-400

mV

Base-Emitter Saturation Voltage (Note 3)

—

-700

—

mV

Base-Emitter Voltage (Note 3)

-580

-665

-750

mV

Collector Cutoff Current

—

—

—

-15

-4.0

nA

µA

Emitter Cutoff Current

—

—

-100

nA

Gain Bandwidth Product

100

—

—

MHz

f = 100MHz

Collector-Base Capacitance

—

—

3

pF

Emitter-Base Capacitance

—

11

—

pF

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

3. Short duration test pulse used to minimize self-heating effect.

0

50

100

150

200

250

0

100

200

T , AMBIENT TEMPERATURE (

°C)

A

Fig. 1, Power Derating Curve

(see Note 1)

1

10

100

1000

10

100

1

I , COLLECTOR CURRENT (mA)

C

Fig. 2, DC Current Gain vs Collector Current

V

= -5V

CE

T = 25

°C

A

T = -50

°C

A

T = 150

°C

A

0

0.1

0.2

0.3

0.4

0.5

0.1

1

10

100

1000

I , COLLECTOR CURRENT (mA)

C

Fig. 3, Collector Saturation Voltage vs Collector Current

I / I = 20

C

B

T = 150

°C

A

T = 25

°C

A

T = -50

°C

A

10

100

1000

1

10

100

I , COLLECTOR CURRENT (mA)

C

Fig. 4, Gain Bandwidth Product vs Collector Current

V

= -5V

CE

T = 25

°C

A