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LGSOT05CLT1G датащи(PDF) 1 Page - Guangdong Youtai Semiconductor Co., Ltd.

номер детали LGSOT05CLT1G
подробное описание детали  The LGSOT05CLT1G is a dual monolithic voltage suppressordesigned to protect components
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производитель  UMW [Guangdong Youtai Semiconductor Co., Ltd.]
домашняя страница  https://www.umw-ic.com/
Logo UMW - Guangdong Youtai Semiconductor Co., Ltd.

LGSOT05CLT1G датащи(HTML) 1 Page - Guangdong Youtai Semiconductor Co., Ltd.

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The LGSOT05CLT1G is a dual monolithic voltage suppressor designed to protect components
which are connected
to data and
transmission lines against ESD .
It clamps the voltage just
above the logic level supply for positive transients , and to a diode drop below ground for negative
transients . It can also work as bidirectional suppressor by connecting only pin1 and 2.
APPLICATIONS
Computers、Printers
Communication systems
FEATURES
2 Unidirectional Transil functions
Low leakage current: IR
max< 20 μA at VRM
300W peak pulse power(8/20μs)
Transient protection for data lines as per
IEC61000-4-2(ESD) 15kV(air) 8kV(contact)
IEC61000-4-5(Lightning) see IPPM below
We declare that the material of product compliant with
RoHS requirements and Halogen Free.
ABSOLUTE RATINGS(Ta = 25℃)
Unit
IEC 61000−4−2 (ESD)
Air
W
Storage temperature
Operating Temperature Range
Peak Pulse Power (tp = 8/20us)
PPP
300
Parameter
Symbol
Limits
Contact
±8
kV
±15
TJ
150
Tstg
−55∼+150
TOP
−40∼+125
TL
260
(10 Second Duration)
UMW
LGSOT05C
R
www.umw-ic.com
1
UTD Semiconductor Co.,Limited
Electrical Parameter
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
IPPM
Peak pulse current
ELECTRICAL CHARACTERISTICS (Ta= 25℃)
IT
mA
LGSOT05CLT1G
1
1. VBR is measured with a pluse test current IT at an ambient temperature of 25℃.
VBR (V)
VC (V)
IPP(A)
(V)
@VRWM (Note 1)
@Ipp = 1 A
@Ipp = 5A
@tp=8/20μs
VRWM
IR (u A)
@ IT
VC (V)
C (pF)
Device
Max
Max
Min
Max
Max
Max
Max
220
5
5
6
9.8
12.5
17


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